Detail publikace

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

Originální název

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

Anglický název

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

Jazyk

en

Originální abstrakt

The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.

Anglický abstrakt

The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.

BibTex


@article{BUT49442,
  author="Petr {Běťák} and Vladislav {Musil}",
  title="Variable Lateral Silicon Controlled Rectifier as an ESD Protection",
  annote="The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS  process.",
  chapter="49442",
  journal="WSEAS Transactions on Electronics",
  number="8",
  volume="5",
  year="2008",
  month="august",
  pages="350--359",
  type="journal article"
}