Detail publikace

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

FRANTA, D., OHLÍDAL, I., KLAPETEK, P.,OHLÍDAL, M.

Originální název

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The results of optical and atomic force microscopy characterization of oxide thin films prepared by thermal oxidation of GaAs single crystal wafers at a temperature of 500 deg oof Celsius in air are presented. The optical characterization is performed using multi-sample modification of the method based on combining variable angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry. It is shown that the films exhibit the rough lower boundaries and refractive index profile inhomogeneities. The spectral dependences of refractive index and extinction coefficient of these films are presented within wide spectral region, i.e., 210-900 nm. The values of thicknesses and roughness parameters characterizing the oxide films are introduced as well.

Klíčová slova

GaAs oxide films, ellipsometry, reflectometry, AFM, optical constants, roughness

Autoři

FRANTA, D., OHLÍDAL, I., KLAPETEK, P.,OHLÍDAL, M.

Rok RIV

2004

Vydáno

1. 1. 2004

Nakladatel

John Wiley & Sons, Ltd.

Místo

CHICHESTER PO19 8SQ, W SUSSEX, ENGLAND

ISSN

0142-2421

Periodikum

Surface and Interface Analysis

Ročník

36

Číslo

8

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1203

Strany do

1206

Strany počet

4

BibTex

@article{BUT46462,
  author="Daniel {Franta} and Ivan {Ohlídal} and Petr {Klapetek} and Miloslav {Ohlídal}",
  title="Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy",
  journal="Surface and Interface Analysis",
  year="2004",
  volume="36",
  number="8",
  pages="1203--1206",
  issn="0142-2421"
}