Detail publikace

Residual Reflectivity of Amplification Media for Extended-Cavity Laser

Originální název

Residual Reflectivity of Amplification Media for Extended-Cavity Laser

Anglický název

Residual Reflectivity of Amplification Media for Extended-Cavity Laser

Jazyk

en

Originální abstrakt

This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.

Anglický abstrakt

This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.

BibTex


@inproceedings{BUT4489,
  author="Bohdan {Růžička} and Otakar {Wilfert}",
  title="Residual Reflectivity of Amplification Media for Extended-Cavity Laser",
  annote="This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.",
  address="SPIE-The International Society for Optical Engineering",
  booktitle="Seveth International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life",
  chapter="4489",
  institution="SPIE-The International Society for Optical Engineering",
  year="2002",
  month="september",
  pages="352",
  publisher="SPIE-The International Society for Optical Engineering",
  type="conference paper"
}