Detail publikace

Measurement and simulation of material influence in MR tomography

STEINBAUER, M. BARTUŠEK, K.

Originální název

Measurement and simulation of material influence in MR tomography

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Materials with different electrical conductivity and/or magnetic susceptibility can cause deformation of magnetic field in MR tomograph, resulting in errors in obtained image. Using simulation and experimental verification we can solve the effect of changes in homogeneity of static and HF magnetic fields caused by specimen made from conductive and/or magnetic material in MR tomograph. This paper describes theoretical base and experimental measurement of the magnetic resonance imaging method for susceptibility measurement. Described technique is suitable for substances with no signal in MR tomography. The method uses deformation of magnetic induction field in specimen vicinity. For MR purposes it is necessary to immerse specimen into reference medium with measurable MR signal (demineralized water is suitable). Shape of magnetic field changed by specimen impact (reaction field) we measure by means of Gradient Echo (GE) measuring method.

Klíčová slova

MR tomography, magnetic susceptibility, conductivity, reaction field, gradient echo

Autoři

STEINBAUER, M.; BARTUŠEK, K.

Rok RIV

2006

Vydáno

6. 9. 2006

Nakladatel

L'Institut Supérieur d'Electronique de Paris, Paris, France

Místo

L'Institut Supérieur d'Electronique de Paris, Paris, France

ISBN

80-214-3250-0

Kniha

Proceedings of the International Workshop ISEP - UTEE 3. - 6. 9. 2006 Paris

Strany od

87

Strany do

92

Strany počet

6

BibTex

@inproceedings{BUT19312,
  author="Miloslav {Steinbauer} and Karel {Bartušek}",
  title="Measurement and simulation of material influence in MR tomography",
  booktitle="Proceedings of the International Workshop ISEP - UTEE 3. - 6. 9. 2006 Paris",
  year="2006",
  pages="6",
  publisher="L'Institut Supérieur d'Electronique de Paris, Paris, France",
  address="L'Institut Supérieur d'Electronique de Paris, Paris, France",
  isbn="80-214-3250-0"
}