Detail publikace

Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting

Mirza, I. Bulgakov, AV. Sopha, H. Starinskiy, SV. Turcicova, H. Novák, O. Muzík, J. Smrz, M. Volodin, VA. Mocek, T. Macak, JM. Bulgakova, NM.

Originální název

Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

As-prepared nanostructured semiconductor materials are usually found in an amorphous form, which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities. The most utilized method is thermal annealing in a furnace, which however is time- and energy-consuming and not applicable for low-temperature melting substrates. An alternative is laser annealing, which can be carried out in a relatively short time and, additionally, offers the possibility of annealing localized areas. However, laser-annealed nanostructures are often distorted by melting, while preserving the as-prepared morphology is essential for practical applications. In this work, we analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures: anodic TiO2 nanotube layers and Ge/Si multilayer stacks. For both cases, regimes of crystallization have been found, which yield in preserving the initial nanomaterial morphologies without any melting signs. On these examples, ultrafast non-thermal mechanisms of structural material transformation are discussed, which can provide new opportunities for conversion of amorphous semiconductor nanomaterials into a desired crystalline form that is of high demand for existing and emerging technologies.

Klíčová slova

amorphous titania nanotubes; ultrashort laser pulses; laser-induced crystallization; non-thermal processes; stress waves; multilayer nanofilms; selective annealing

Autoři

Mirza, I.; Bulgakov, AV.; Sopha, H.; Starinskiy, SV.; Turcicova, H.; Novák, O.; Muzík, J.; Smrz, M.; Volodin, VA.; Mocek, T.; Macak, JM.; Bulgakova, NM.

Vydáno

19. 10. 2023

Nakladatel

FRONTIERS MEDIA SA

Místo

LAUSANNE

ISSN

2673-3013

Periodikum

Frontiers in Nanotechnology

Ročník

5

Číslo

1271832

Stát

Švýcarská konfederace

Strany počet

12

URL

https://www.frontiersin.org/articles/10.3389/fnano.2023.1271832/full

BibTex

@article{BUT187366,
  author="Mirza, I. and Bulgakov, AV. and Sopha, H. and Starinskiy, SV. and Turcicova, H. and Novák, O. and Muzík, J. and Smrz, M. and Volodin, VA. and Mocek, T. and Macak, JM. and Bulgakova, NM.",
  title="Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting",
  journal="Frontiers in Nanotechnology",
  year="2023",
  volume="5",
  number="1271832",
  pages="12",
  doi="10.3389/fnano.2023.1271832",
  issn="2673-3013",
  url="https://www.frontiersin.org/articles/10.3389/fnano.2023.1271832/full"
}