Detail publikace

Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology

JURÍK, P. GALAJDA, P. SOKOL, M. URBANEC, T.

Originální název

Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The paper describes a design and simulation of the differential driver for a dielectric resonator as an Application Specific Integrated Circuit for Ultra-Wideband (UWB) sensor systems. The driver was implemented in 130 nm SiGe BiCMOS technology from IHP Microelectronics. The circuit was designed for the parallel configuration of microstrip lines, with coupled cylindrical dielectric resonator between them. In the simulations, the circuit oscillated around required 21.75 GHz frequency with an equivalent dielectric resonator circuit. The wire-bond inductance influence on driver frequency and matching are simulated and explained. The power consumption of the oscillator is 25 mA at 2.5 V power supply. The maximum simulated single-ended output amplitude achieves 660 mVpp.

Klíčová slova

DRO; oscillator; UWB; ASIC

Autoři

JURÍK, P.; GALAJDA, P.; SOKOL, M.; URBANEC, T.

Vydáno

27. 4. 2023

Nakladatel

IEEE

Místo

NEW YORK

ISBN

979-8-3503-9834-2

Kniha

RADIOELEKTRONIKA 2023: 2023 33rd International Conference Radioelektronika

Strany od

1

Strany do

5

Strany počet

5

URL

https://ieeexplore.ieee.org/abstract/document/10109083

BibTex

@inproceedings{BUT183813,
  author="Patrik {Jurík} and Pavol {Galajda} and Miroslav {Sokol} and Tomáš {Urbanec}",
  title="Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology",
  booktitle="RADIOELEKTRONIKA 2023: 2023 33rd International Conference Radioelektronika",
  year="2023",
  pages="5",
  publisher="IEEE",
  address="NEW YORK",
  doi="10.1109/RADIOELEKTRONIKA57919.2023.10109083",
  isbn="979-8-3503-9834-2",
  url="https://ieeexplore.ieee.org/abstract/document/10109083"
}