Detail publikace

Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy

KUNC, J. REJHON, M. DĚDIČ, V. BÁBOR, P.

Originální název

Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We have grown homoepitaxial high resistivity SiC layers on conducting SiC substrates. We develop a method to determine the thickness of grown layers by scanning confocal Raman spectroscopy (SCRS). We also grow epitaxial graphene on SiC layers to label the top sample surface, and, we correlate the top surface position with Rayleigh scattering (RS). The interface between the high resistivity SiC layer and conductive SiC substrate is probed by the transition from LO phonon to the coupled LO phonon-plasmon Raman mode. The layer thickness measurements are verified by ellipsometry and Secondary Ion Mass Spectroscopy (SIMS). We show that the SCRS method provides superior lateral and vertical resolution, it is robust against errorneous conclusions based on ad-hoc models, and it is easy to implement. (C) 2019 Elsevier B.V. All rights reserved.

Klíčová slova

SiC layer thickness; Graphene; Raman spectroscopy

Autoři

KUNC, J.; REJHON, M.; DĚDIČ, V.; BÁBOR, P.

Vydáno

15. 6. 2019

Nakladatel

ELSEVIER SCIENCE SA

Místo

LAUSANNE

ISSN

0925-8388

Periodikum

Journal of Alloys and Compounds

Ročník

789

Číslo

1

Stát

Švýcarská konfederace

Strany od

607

Strany do

612

Strany počet

6

URL

BibTex

@article{BUT177520,
  author="Jan {Kunc} and Martin {Rejhon} and Václav {Dědič} and Petr {Bábor}",
  title="Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy",
  journal="Journal of Alloys and Compounds",
  year="2019",
  volume="789",
  number="1",
  pages="607--612",
  doi="10.1016/j.jallcom.2019.02.305",
  issn="0925-8388",
  url="https://www.sciencedirect.com/science/article/pii/S0925838819307716"
}