Detail publikace

Organoselenium Precursors for Atomic Layer Deposition

CHARVOT, J. ZAZPE MENDIOROZ, R. MACÁK, J. BUREŠ, F.

Originální název

Organoselenium Precursors for Atomic Layer Deposition

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)-selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl5, affording MoSe2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.

Klíčová slova

Organoselenium compounds

Autoři

CHARVOT, J.; ZAZPE MENDIOROZ, R.; MACÁK, J.; BUREŠ, F.

Vydáno

16. 3. 2021

Nakladatel

American Chemical Society

Místo

WASHINGTON

ISSN

2470-1343

Periodikum

ACS OMEGA

Ročník

6

Číslo

10

Stát

Spojené státy americké

Strany od

6554

Strany do

6558

Strany počet

5

URL

Plný text v Digitální knihovně

BibTex

@article{BUT173123,
  author="Jaroslav {Charvot} and Raúl {Zazpe Mendioroz} and Jan {Macák} and Filip {Bureš}",
  title="Organoselenium Precursors for Atomic Layer Deposition",
  journal="ACS OMEGA",
  year="2021",
  volume="6",
  number="10",
  pages="6554--6558",
  doi="10.1021/acsomega.1c00223",
  issn="2470-1343",
  url="https://pubs.acs.org/doi/10.1021/acsomega.1c00223"
}