Detail publikace

Wet etching of SiO2 as sacrificial layer with infinite selectivity to Al

BRODSKÝ, J. GABLECH, I.

Originální název

Wet etching of SiO2 as sacrificial layer with infinite selectivity to Al

Anglický název

Wet etching of SiO2 as sacrificial layer with infinite selectivity to Al

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

čeština

Originální abstrakt

This work presents an unusual method for releasing microelectromechanical systems which contain an Al layer. This is done by wet etching of SiO2 as a sacrificial layer. Mixture of 49% HF acid and 20% H2SO4∙SO3 (oleum) is used. Oleum keeps the solution water-free and subsequently prevents the attack of Al layer. Exceptional etch rate (≈ 1 µm·min−1) of thermally grown SiO2 is achieved by this method. The infinite selectivity to Al layer is verified by measuring the thickness of layer before and after etching. The etching itself is done in an ordinary fume hood in polytetrafluorethylene (PTFE) beaker.

Anglický abstrakt

This work presents an unusual method for releasing microelectromechanical systems which contain an Al layer. This is done by wet etching of SiO2 as a sacrificial layer. Mixture of 49% HF acid and 20% H2SO4∙SO3 (oleum) is used. Oleum keeps the solution water-free and subsequently prevents the attack of Al layer. Exceptional etch rate (≈ 1 µm·min−1) of thermally grown SiO2 is achieved by this method. The infinite selectivity to Al layer is verified by measuring the thickness of layer before and after etching. The etching itself is done in an ordinary fume hood in polytetrafluorethylene (PTFE) beaker.

Klíčová slova

MEMS, selectivity, SiO2 etching, sacrificial layer

Klíčová slova v angličtině

MEMS, selectivity, SiO2 etching, sacrificial layer

Autoři

BRODSKÝ, J.; GABLECH, I.

Vydáno

27. 4. 2020

Nakladatel

VUT

Místo

Brno, Czech Republic

ISBN

978-80-214-5867-3

Kniha

Proceedings of the 26th Conference STUDENT EEICT

Strany od

292

Strany do

295

Strany počet

4

BibTex

@inproceedings{BUT171864,
  author="Jan {Brodský} and Imrich {Gablech}",
  title="Wet etching of SiO2 as sacrificial layer with infinite selectivity to Al",
  booktitle="Proceedings of the 26th Conference STUDENT EEICT",
  year="2020",
  pages="292--295",
  publisher="VUT",
  address="Brno, Czech Republic",
  isbn="978-80-214-5867-3"
}