Electronic structure of La2/3Sr1/3MnO3: Interplay of oxygen octahedra rotations and epitaxial strain

článek v časopise ve Web of Science, Jimp

angličtina

Influence of epitaxial strain and oxygen octahedra rotations on electronic structure of La2/3Sr1/3MnO3 ultrathin films was systematically studied. The investigated films were grown by pulsed laser deposition on four different substrates: cubic (001)-oriented LaAlO3, (001) (LaAlO3)(1/3) (Sr2AlTaO6)(2/3), (001) SrTiO3, and orthorhombic (110) DyScO3, providing a broad range of induced epitaxial strains. Magnetic properties were found to deteriorate with increasing value of the epitaxial strain, as expected due to unit cell distortion increasingly deviating from the bulk and effect of the magnetically inert layer. A combination of spectroscopic ellipsometry and magneto-optical Kerr effect spectroscopy was used to determine spectra of the diagonal and off-diagonal elements of permittivity tensor. The off-diagonal elements at room temperature confirmed the presence of two previously reported electronic transitions in the spectra of all films. Moreover they revealed another electronic transition around 4.3 eV only in the spectra of films grown under compressive strain. We proposed classification of this transition as a crystal field paramagnetic Mn t(2g) -> e(g) transition. Ab initio calculations were employed to distinguish between the potential influence of oxygen octahedra rotations and distortions. The ab initio calculations indicated a negligible influence of oxygen octahedra rotations on magneto-optical properties of La2/3Sr1/3MnO3. They further supported the proposed classification of the additional electronic transition, showing a key role of strain in controlling the electronic structure of ultrathin perovskite films.

Perovskite, Ultrathin films, Ab initio calculations, Magneto-optical Kerr effect

ZAHRADNÍK, M.; MAROUTIAN, T.; ZELENÝ, M.; HORÁK, L.; KURIJ, G.; MALEČEK, T.; BERAN, L.; VIŠŇOVSKÝ, Š.; AGNUS, G.; LECOEUR, P.; VEIS, M.

22. 5. 2019

2469-9950

PHYSICAL REVIEW B

99

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Spojené státy americké

195138

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10

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.195138