Detail publikace

A 0.5-V Bulk-Driven Active Voltage Attenuator

Originální název

A 0.5-V Bulk-Driven Active Voltage Attenuator

Anglický název

A 0.5-V Bulk-Driven Active Voltage Attenuator

Jazyk

en

Originální abstrakt

In this work, a novel differential active voltage attenuator that is capable for operation under low supply voltage and power consumption is presented. The proposed attenuator is based on bulk-driven MOS devices. Thanks to using the fully balanced differential structure, the attenuator demonstrates improved common-mode rejection capability. The attenuator has been fabricated using 180 nm TSMC CMOS technology with 0.5V power supply and 0.366 µW power consumption. The experimental results give a voltage attenuation around -6 dB, rail-to-rail input common-mode range (ICMR) and common-mode rejection ratio (CMRR) around 27.8 dB. As application example, a fully balanced differential amplifier is designed and simulated. The simulated and measurement results agree with the theory and confirm the robustness of the design.

Anglický abstrakt

In this work, a novel differential active voltage attenuator that is capable for operation under low supply voltage and power consumption is presented. The proposed attenuator is based on bulk-driven MOS devices. Thanks to using the fully balanced differential structure, the attenuator demonstrates improved common-mode rejection capability. The attenuator has been fabricated using 180 nm TSMC CMOS technology with 0.5V power supply and 0.366 µW power consumption. The experimental results give a voltage attenuation around -6 dB, rail-to-rail input common-mode range (ICMR) and common-mode rejection ratio (CMRR) around 27.8 dB. As application example, a fully balanced differential amplifier is designed and simulated. The simulated and measurement results agree with the theory and confirm the robustness of the design.

BibTex


@article{BUT156963,
  author="Spyridon {Vlassis} and George {Souliotis} and Fabian {Khateb} and Tomasz {Kulej}",
  title="A 0.5-V Bulk-Driven Active Voltage Attenuator",
  annote="In this work, a novel differential active voltage attenuator that is capable for operation under low supply voltage and power consumption is presented. The proposed attenuator is based on bulk-driven MOS devices. Thanks to using the fully balanced differential structure, the attenuator demonstrates improved common-mode rejection capability. The attenuator has been fabricated using 180 nm TSMC CMOS technology with 0.5V power supply and 0.366 µW power consumption. The experimental results give a voltage attenuation around -6 dB, rail-to-rail input common-mode range (ICMR) and common-mode rejection ratio (CMRR) around 27.8 dB. As application example, a fully balanced differential amplifier is designed and simulated. The simulated and measurement results agree with the theory and confirm the robustness of the design.",
  address="SPRINGER BIRKHAUSER",
  chapter="156963",
  doi="10.1007/s00034-019-01146-6",
  howpublished="print",
  institution="SPRINGER BIRKHAUSER",
  number=", IF: 1.922",
  year="2019",
  month="may",
  pages="1--10",
  publisher="SPRINGER BIRKHAUSER",
  type="journal article in Scopus"
}