Detail publikace

Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications

Originální název

Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications

Anglický název

Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications

Jazyk

en

Originální abstrakt

This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage (LV) low-power (LP) integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 226 µm x 78 µm. The DDA is supplied with 0.5 V and consume only 1.23 µW while the ICMR is rail-to-rail. The measured open-loop dc gain is 62 dB, the gain bandwidth product is 56.4 kHz and the total harmonic distortion is 0.2 % @ 1 kHz for 400 mV peak-to-peak input sine-wave.

Anglický abstrakt

This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage (LV) low-power (LP) integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 226 µm x 78 µm. The DDA is supplied with 0.5 V and consume only 1.23 µW while the ICMR is rail-to-rail. The measured open-loop dc gain is 62 dB, the gain bandwidth product is 56.4 kHz and the total harmonic distortion is 0.2 % @ 1 kHz for 400 mV peak-to-peak input sine-wave.

BibTex


@article{BUT151344,
  author="Fabian {Khateb} and Tomasz {Kulej} and Montree {Kumngern} and Costas {Psychalinos}",
  title="Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications
",
  annote="This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage (LV) low-power (LP) integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 226 µm x 78 µm. The DDA is supplied with 0.5 V and consume only 1.23 µW while the ICMR is rail-to-rail. The measured open-loop dc gain is 62 dB, the gain bandwidth product is 56.4 kHz and the total harmonic distortion is 0.2 % @ 1 kHz for 400 mV peak-to-peak input sine-wave.",
  address="SPRINGER BIRKHAUSER",
  chapter="151344",
  doi="10.1007/s00034-018-0999-x",
  howpublished="print",
  institution="SPRINGER BIRKHAUSER",
  number="6, IF: 1.922",
  volume="38",
  year="2019",
  month="april",
  pages="2829--2845",
  publisher="SPRINGER BIRKHAUSER",
  type="journal article in Web of Science"
}