Detail publikace

0.5 V bulk-driven ring amplifier based on master–slave technique

VLASSIS, S. KULEJ, T. KHATEB, F. SOULIOTIS, G.

Originální název

0.5 V bulk-driven ring amplifier based on master–slave technique

Anglický název

0.5 V bulk-driven ring amplifier based on master–slave technique

Jazyk

en

Originální abstrakt

This paper presents a new non-clocked standalone bulk-driven ring amplifier based on master-slave technique that ensures stable operation under process, supply voltage and temperature (PVT) variations. Unlike the conventional ring amplifier the proposed topology operates without the switched capacitor technique under extremely low supply voltage. The bulk-driven ring amplifier was designed using a triple-well 0.18 µm CMOS technology. The simulation results show a 91 dB gain with 13 μW power dissipation from a 0.5 V supply voltage and the total harmonic distortion was equal to 0.29 %.

Anglický abstrakt

This paper presents a new non-clocked standalone bulk-driven ring amplifier based on master-slave technique that ensures stable operation under process, supply voltage and temperature (PVT) variations. Unlike the conventional ring amplifier the proposed topology operates without the switched capacitor technique under extremely low supply voltage. The bulk-driven ring amplifier was designed using a triple-well 0.18 µm CMOS technology. The simulation results show a 91 dB gain with 13 μW power dissipation from a 0.5 V supply voltage and the total harmonic distortion was equal to 0.29 %.

Dokumenty

BibTex


@article{BUT127681,
  author="Spyridon {Vlassis} and Tomasz {Kulej} and Fabian {Khateb} and George {Souliotis}",
  title="0.5 V bulk-driven ring amplifier based on master–slave technique",
  annote="This paper presents a new non-clocked standalone bulk-driven ring amplifier based on master-slave technique that ensures stable operation under process, supply voltage and temperature (PVT) variations. Unlike the conventional ring amplifier the proposed topology operates without the switched capacitor technique under extremely low supply voltage. The bulk-driven ring amplifier was designed using a triple-well 0.18 µm CMOS technology. The simulation results show a 91 dB gain with 13 μW power dissipation from a 0.5 V supply voltage and the total harmonic distortion was equal to 0.29 %.",
  address="Springer",
  chapter="127681",
  doi="10.1007/s10470-016-0858-2",
  howpublished="print",
  institution="Springer",
  number="1, IF: 0.623",
  volume="2017 (90)",
  year="2017",
  month="january",
  pages="189--197",
  publisher="Springer",
  type="journal article in Web of Science"
}