Detail publikace

Thick film resistor characterisation by non-linearity and resistance change after high voltage stress

Originální název

Thick film resistor characterisation by non-linearity and resistance change after high voltage stress

Anglický název

Thick film resistor characterisation by non-linearity and resistance change after high voltage stress

Jazyk

en

Originální abstrakt

Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured before and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed because of local temperature increase in the spots with high value of local current density. While resistance changes are of the order of percent, the noise spectral density and non-linearity varies more then 10 percent. iii) Sample shows “improved” value of THV (for tens of percent) after the pulse stressing, while resistance increases (for few percent). The next pulses are followed by consequent increase of both THV and resistance value. We can say, that not only increase but also any strong fall of THV value reflects the low reliable resistor. The changes of non-linearity are more pronounced then resistance ones.

Anglický abstrakt

Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured before and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed because of local temperature increase in the spots with high value of local current density. While resistance changes are of the order of percent, the noise spectral density and non-linearity varies more then 10 percent. iii) Sample shows “improved” value of THV (for tens of percent) after the pulse stressing, while resistance increases (for few percent). The next pulses are followed by consequent increase of both THV and resistance value. We can say, that not only increase but also any strong fall of THV value reflects the low reliable resistor. The changes of non-linearity are more pronounced then resistance ones.

BibTex


@inproceedings{BUT12131,
  author="Vlasta {Sedláková} and Josef {Šikula}",
  title="Thick film resistor characterisation by non-linearity and resistance change after high voltage stress",
  annote="Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured before and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed because of local temperature increase in the spots with high value of local current density. While resistance changes are of the order of percent, the noise spectral density and non-linearity varies more then 10 percent. iii) Sample shows “improved” value of THV (for tens of percent) after the pulse stressing, while resistance increases (for few percent). The next pulses are followed by consequent increase of both THV and resistance value. We can say, that not only increase but also any strong fall of THV value reflects the low reliable resistor. The changes of non-linearity are more pronounced then resistance ones.",
  address="Department of Physics FEEC, Brno University of Technology",
  booktitle="New Trends in Physics - Proceedings of the Conference",
  chapter="12131",
  institution="Department of Physics FEEC, Brno University of Technology",
  year="2004",
  month="january",
  pages="88",
  publisher="Department of Physics FEEC, Brno University of Technology",
  type="conference paper"
}