Detail publikace

Ultimate Absolute Hooge Parameter for Semiconductors and Graphene

OHYA, H. TACANO, M. PAVELKA, J. ŠIKULA, J. MUSHA, T.

Originální název

Ultimate Absolute Hooge Parameter for Semiconductors and Graphene

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The temperature dependence of the Hooge parameter alfaH for both n- and p-type InGaAs heterostructures with as-grown non-alloyed ohmic contacts shows good agreement with that estimated from the harmonic coupling model; alfaH is given by aa/lambda, where aa is the lattice constant and lambda is the mean free path of the semiconductor material. Experimental results for several other semiconducting materials normalized by the mobility ratio also verify the validity of the model. We are now able to estimate the Hooge parameter theoretically from only the material parameters, whereas the experimental results are scattered over several orders of magnitude.

Klíčová slova

Hooge parameter; mean free path; mobility fluctuations; InGaAs; InP; GaAs

Autoři

OHYA, H.; TACANO, M.; PAVELKA, J.; ŠIKULA, J.; MUSHA, T.

Rok RIV

2015

Vydáno

9. 10. 2015

Nakladatel

IEEE

ISBN

978-1-4673-8335-6

Kniha

Noise and Fluctuations (ICNF)

Strany od

1

Strany do

4

Strany počet

4

URL

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288616

BibTex

@inproceedings{BUT120497,
  author="H. {Ohya} and Munecazu {Tacano} and Jan {Pavelka} and Josef {Šikula} and Toshimitsu {Musha}",
  title="Ultimate Absolute Hooge Parameter for Semiconductors and Graphene
",
  booktitle="Noise and Fluctuations (ICNF)",
  year="2015",
  pages="1--4",
  publisher="IEEE",
  doi="10.1109/ICNF.2015.7288616",
  isbn="978-1-4673-8335-6",
  url="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288616"
}