Detail publikace

1 V Rectifier based on bulk-driven quasi-floating-gate differential difference amplifiers

Originální název

1 V Rectifier based on bulk-driven quasi-floating-gate differential difference amplifiers

Anglický název

1 V Rectifier based on bulk-driven quasi-floating-gate differential difference amplifiers

Jazyk

en

Originální abstrakt

This paper presents experimental results of a low-voltage (LV) low-power (LP) voltage rectifier realization, employing two differential difference amplifiers (DDA) as active elements. The proposed DDA is based on the recently presented technique named bulk-driven quasi-floating-gate (BQ) that enables the circuit to work in 1V power supply voltage, with threshold-to-supply (VTH /VDD) ratio and modulation index factor (MIF) equal to 70% and 90%, respectively. The competitive features of the proposed structure compared with other state-of-the-art circuits are the capability for working under LV supply, with extended common mode (CM) voltage range and improved input transconductance. The proposed circuit was designed, simulated and fabricated employing the Cadence platform and MOS transistors models provided by the 0.35um CMOS AMIS process. The total chip area was 213um x 266um. The provided simulation and experimental results prove the attractive performances of the proposed rectifier topology.

Anglický abstrakt

This paper presents experimental results of a low-voltage (LV) low-power (LP) voltage rectifier realization, employing two differential difference amplifiers (DDA) as active elements. The proposed DDA is based on the recently presented technique named bulk-driven quasi-floating-gate (BQ) that enables the circuit to work in 1V power supply voltage, with threshold-to-supply (VTH /VDD) ratio and modulation index factor (MIF) equal to 70% and 90%, respectively. The competitive features of the proposed structure compared with other state-of-the-art circuits are the capability for working under LV supply, with extended common mode (CM) voltage range and improved input transconductance. The proposed circuit was designed, simulated and fabricated employing the Cadence platform and MOS transistors models provided by the 0.35um CMOS AMIS process. The total chip area was 213um x 266um. The provided simulation and experimental results prove the attractive performances of the proposed rectifier topology.

BibTex


@article{BUT110976,
  author="Fabian {Khateb} and Spyridon {Vlassis} and Montree {Kumngern} and Costas {Psychalinos} and Tomasz {Kulej} and Radimír {Vrba} and Lukáš {Fujcik}",
  title="1 V Rectifier based on bulk-driven quasi-floating-gate differential difference amplifiers",
  annote="This paper presents experimental results of a low-voltage (LV) low-power (LP) voltage rectifier realization, employing two differential difference amplifiers (DDA) as active elements. The proposed DDA is based on the recently presented technique named bulk-driven quasi-floating-gate (BQ) that enables the circuit to work in 1V power supply voltage, with threshold-to-supply (VTH /VDD) ratio and modulation index factor (MIF) equal to 70% and 90%, respectively. The competitive features of the proposed structure compared with other state-of-the-art circuits are the capability for working under LV supply, with extended common mode (CM) voltage range and improved input transconductance. The proposed circuit was designed, simulated and fabricated employing the Cadence platform and MOS transistors models provided by the 0.35um CMOS AMIS process. The total chip area was 213um x 266um. The provided simulation and experimental results prove the attractive performances of the proposed rectifier topology.",
  address="SPRINGER BIRKHAUSER",
  chapter="110976",
  doi="10.1007/s00034-014-9958-3",
  institution="SPRINGER BIRKHAUSER",
  number="7, IF: 1.118",
  volume="2015 ( 34)",
  year="2015",
  month="march",
  pages="2077--2089",
  publisher="SPRINGER BIRKHAUSER",
  type="journal article in Web of Science"
}