Detail publikace

Study of Parallel L beta C alpha-Circuit

USHAKOV, P. KUBÁNEK, D. KOTON, J.

Originální název

Study of Parallel L beta C alpha-Circuit

Anglický název

Study of Parallel L beta C alpha-Circuit

Jazyk

en

Originální abstrakt

This article analyzes parallel resonant circuit containing fractional capacitor and inductor. Relations for complex impedance, resonant frequency, and resistance at this frequency are derived. These formulas are then expressed graphically. The influence of the exponents of frequency dependence of impedance alpha and beta is especially emphasized which is not present when classical elements are used. The possibilities of practical implementation of fractional elements are introduced whereas RC elements with distributed parameters are preferred. An example of fractional capacitor made by thick-film technology is shown and rules for finding its parameters are stated.

Anglický abstrakt

This article analyzes parallel resonant circuit containing fractional capacitor and inductor. Relations for complex impedance, resonant frequency, and resistance at this frequency are derived. These formulas are then expressed graphically. The influence of the exponents of frequency dependence of impedance alpha and beta is especially emphasized which is not present when classical elements are used. The possibilities of practical implementation of fractional elements are introduced whereas RC elements with distributed parameters are preferred. An example of fractional capacitor made by thick-film technology is shown and rules for finding its parameters are stated.

Dokumenty

BibTex 


@inproceedings{BUT108724,
  author="Peter A. {Ushakov} and David {Kubánek} and Jaroslav {Koton}",
  title="Study of Parallel L beta C alpha-Circuit",
  annote="This article analyzes parallel resonant circuit containing fractional capacitor and inductor. Relations for complex impedance, resonant frequency, and resistance at this frequency are derived. These formulas are then expressed graphically. The influence of the exponents of frequency dependence of impedance alpha and beta is especially emphasized which is not present when classical elements are used. The possibilities of practical implementation of fractional elements are introduced whereas RC elements with distributed parameters are preferred. An example of fractional capacitor made by thick-film technology is shown and rules for finding its parameters are stated.",
  booktitle="Proceedings of the 38th International Conference on Telecommunication and Signal Processing",
  chapter="108724",
  howpublished="electronic, physical medium",
  year="2015",
  month="july",
  pages="693--697",
  type="conference paper"
}