Detail publikace

Local optical characteristics of semiconductor surfaces

TOMÁNEK, P. BENEŠOVÁ, M. OTEVŘELOVÁ, D. LÉTAL, P.

Originální název

Local optical characteristics of semiconductor surfaces

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Photoluminescence (PL), photoreflectance (PR) and photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental methods to investigate the properties of bulk semiconductors, microstructures, surfaces and interfaces. We present near-field local PL, PR and PC spectroscopic study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (SNOM) in combination with Nitrogen laser and tuning dye laser and with He-Ne laser. Reflection Scanning Near-field Optical Microscope (SNOM) employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. In the illumination-collection hybrid mode, the first one serves to excite the semiconductor sample and the second one to investigate characteristics of the structure and to pick up the PL and PR intensity reflected from the sample. In the illumination mode, the nanosource illuminates locally the semiconductor structure, and excites the photoelectrons in the PC spectroscopy. This near-field device is applied for the diagnostics of the defects in semiconductor devices. Take opportunity of the high lateral resolution of the microscope and combine it with fast micro-PL, PR responses, it is possible to locate for instance defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Klíčová slova

Scanning near-field optical microscopy, resolution, local photoluminescence, local photoreflectance, local current spectroscopy

Autoři

TOMÁNEK, P.; BENEŠOVÁ, M.; OTEVŘELOVÁ, D.; LÉTAL, P.

Rok RIV

2002

Vydáno

25. 2. 2002

Nakladatel

SPIE

Místo

Bellingham, USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Ročník

4607

Číslo

2

Stát

Spojené státy americké

Strany od

168

Strany do

177

Strany počet

10

BibTex

@article{BUT40430,
  author="Pavel {Tománek} and Markéta {Benešová} and Dana {Otevřelová} and Petr {Létal}",
  title="Local optical characteristics of semiconductor surfaces",
  journal="Proceedings of SPIE",
  year="2002",
  volume="4607",
  number="2",
  pages="168--177",
  issn="0277-786X"
}