Detail publikace

Behaviour of silicon nanostructure in electric field

Originální název

Behaviour of silicon nanostructure in electric field

Anglický název

Behaviour of silicon nanostructure in electric field

Jazyk

en

Originální abstrakt

Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.

Anglický abstrakt

Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.

BibTex


@inproceedings{BUT31126,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Behaviour of silicon nanostructure in electric field",
  annote="Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.",
  address="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  booktitle="Proceedings of Physics of Materials 09, V. Lisý, D. Olčák (Eds).,",
  chapter="31126",
  howpublished="print",
  institution="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  year="2009",
  month="october",
  pages="34--37",
  publisher="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  type="conference paper"
}