Detail publikace

PC Partial Discharge Processing

Originální název

PC Partial Discharge Processing

Anglický název

PC Partial Discharge Processing

Jazyk

en

Originální abstrakt

Investigation of Partial Discharge (PD) is very important in technology of high voltage devices such as transformers, rotary machines, electronic drives, etc. It helps us to predict an increased risk of breakdown. The monitoring of PD occurrence is necessary in semiconductor devices working at voltages above 600 V like VDMOS MOSFET, IGBT and special bipolar transistors, for example. Also in case of driving integrated circuits where the applied voltage is low, but conducting routes are not a long distance apart the distance between conducting routes is rather short, risk of occurrence of PD occurrence is relatively high. This work is focused on PC supported multi channel Partial Discharge measurement.

Anglický abstrakt

Investigation of Partial Discharge (PD) is very important in technology of high voltage devices such as transformers, rotary machines, electronic drives, etc. It helps us to predict an increased risk of breakdown. The monitoring of PD occurrence is necessary in semiconductor devices working at voltages above 600 V like VDMOS MOSFET, IGBT and special bipolar transistors, for example. Also in case of driving integrated circuits where the applied voltage is low, but conducting routes are not a long distance apart the distance between conducting routes is rather short, risk of occurrence of PD occurrence is relatively high. This work is focused on PC supported multi channel Partial Discharge measurement.

BibTex


@inproceedings{BUT22836,
  author="Tomáš {Havlíček} and Jaroslav {Boušek} and Martin {Magát}",
  title="PC Partial Discharge Processing",
  annote="Investigation of Partial Discharge (PD) is very important in technology of high voltage devices such as transformers, rotary machines, electronic drives, etc. It helps us to predict an increased risk of breakdown. The monitoring of PD occurrence is necessary in semiconductor devices working at voltages above 600 V like VDMOS MOSFET, IGBT and special bipolar transistors, for example. Also in case of driving integrated circuits where the applied voltage is low, but conducting routes are not a long distance apart the distance between conducting routes is rather short, risk of occurrence of PD occurrence is relatively high. This work is focused on PC supported multi channel Partial Discharge measurement.",
  address="University of Miskolc, Innovation and Technology Transfer Centre",
  booktitle="6th International Conference of PhD Students",
  chapter="22836",
  institution="University of Miskolc, Innovation and Technology Transfer Centre",
  year="2007",
  month="august",
  pages="245--248",
  publisher="University of Miskolc, Innovation and Technology Transfer Centre",
  type="conference paper"
}