Detail publikace

Downsizing the Channel Length of Vertical Organic Electrochemical Transistors

BRODSKÝ, J. GABLECH, I. MIGLIACCIO, L. HAVLÍČEK, M. DONAHUE, M. GLOWACKI, E.

Originální název

Downsizing the Channel Length of Vertical Organic Electrochemical Transistors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Organic electrochemical transistors (OECTs) are promising building blocks for bioelectronic devices such as While the majority of OECTs use simple planar geometry, there is interest in exploring how these devices operate with much shorter channels on the submicron scale. Here, we show a practical route toward the minimization of the channel length of the transistor using traditional photolithography, enabling large-scale utilization. We describe the fabrication of such transistors using two types of conducting polymers. First, commercial solution-processed poly(dioxyethylenethiophene):poly(styrene sulfonate), PEDOT:PSS. Next, we also exploit the short channel length to support easy in situ electropolymerization of poly(dioxyethylenethiophene):tetrabutyl ammonium hexafluorophosphate, PEDOT:PF6. Both variants show different promising features, leading the way in terms of transconductance (gm), with the measured peak gm up to 68 mS for relatively thin (280 nm) channel layers on devices with the channel length of 350 nm and with widths of 50, 100, and 200 μm. This result suggests that the use of electropolymerized semiconductors, which can be easily customized, is viable with vertical geometry, as uniform and thin layers can be created. Spin-coated PEDOT:PSS lags behind with the lower values of gm; however, it excels in terms of the speed of the device and also has a comparably lower off current (300 nA), leading to unusually high on/off ratio, with values up to 8.6 × 104. Our approach to vertical gap devices is simple, scalable, and can be extended to other applications where small electrochemical channels are desired.

Klíčová slova

vertical organic electrochemical transistor, microfabrication, PEDOT, electrochemical polymerization

Autoři

BRODSKÝ, J.; GABLECH, I.; MIGLIACCIO, L.; HAVLÍČEK, M.; DONAHUE, M.; GLOWACKI, E.

Vydáno

22. 5. 2023

Nakladatel

American Chemical Society

Místo

USA

ISSN

1944-8244

Periodikum

ACS APPL MATER INTER

Ročník

15

Číslo

22

Stát

Spojené státy americké

Strany od

27002

Strany do

27009

Strany počet

8

URL

https://pubs.acs.org/doi/full/10.1021/acsami.3c02049

Plný text v Digitální knihovně

http://hdl.handle.net/11012/213672

BibTex

@article{BUT183716,
  author="Jan {Brodský} and Imrich {Gablech} and Ludovico {Migliaccio} and Marek {Havlíček} and Mary {Donahue} and Eric Daniel {Glowacki}",
  title="Downsizing the Channel Length of Vertical Organic Electrochemical Transistors",
  journal="ACS APPL MATER INTER",
  year="2023",
  volume="15",
  number="22",
  pages="8",
  doi="10.1021/acsami.3c02049",
  issn="1944-8244",
  url="https://pubs.acs.org/doi/full/10.1021/acsami.3c02049"
}