Detail publikace

1.2 v Differential Difference Current Conveyor Using MIGD MOST Technique

PHATSORNSIRI, P TORTEANCHAI, U. RATTANASUTTIKAN, M. JONGCHANACHAVAWAT, W. KUMNGERN, M. KHATEB, F.

Originální název

1.2 v Differential Difference Current Conveyor Using MIGD MOST Technique

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper presents a new differential difference current conveyor (DDCC) using multiple-input gate-driven MOS transistor (MIGD MOST) technique. The MIGD MOST technique can be reduced the number of transistor differential pair. The differential input stage is implemented by flipped voltage follower to obtain low power supply requirements. Thus, the proposed DDCC is capable to working with a supply voltage of 1.2 V and it consumes a 44.2 μW of power dissipation. The simulations were performed with PSPICE using the 0.18 μm CMOS technology to prove the workability of the new circuit

Klíčová slova

differential difference current conveyor; low-voltage low-power; multiple-input MOS transistor

Autoři

PHATSORNSIRI, P; TORTEANCHAI, U.; RATTANASUTTIKAN, M.; JONGCHANACHAVAWAT, W.; KUMNGERN, M.; KHATEB, F.

Vydáno

24. 5. 2022

Nakladatel

IEEE

Místo

Prachuap Khiri Khan, Thailand

ISBN

978-166-548-584-5

Kniha

19th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2022

Strany od

1

Strany do

4

Strany počet

4

URL

https://ieeexplore.ieee.org/document/9795466

BibTex

@inproceedings{BUT180778,
  author="PHATSORNSIRI, P and TORTEANCHAI, U. and RATTANASUTTIKAN, M. and JONGCHANACHAVAWAT, W. and KUMNGERN, M. and KHATEB, F.",
  title="1.2 v Differential Difference Current Conveyor Using MIGD MOST Technique",
  booktitle="19th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2022",
  year="2022",
  pages="1--4",
  publisher="IEEE",
  address="Prachuap Khiri Khan, Thailand",
  doi="10.1109/ECTI-CON54298.2022.9795466",
  isbn="978-166-548-584-5",
  url="https://ieeexplore.ieee.org/document/9795466"
}