Detail publikace

Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors

BIOLEK, D. KOHL, Z. VÁVRA, J. BIOLKOVÁ, V. BHARDWAJ, K. SRIVASTAVA, M.

Originální název

Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Two-ports for mutual transformation between flux-controlled memristors and charge-controlled memristors are proposed. Attention is paid to memristors with the region of negative differential memristance in the charge-flux constitutive relation, when such a transformation should be made carefully. Connections between this transformation, duality rules, and Chua's table of higher-order elements are described. The proposed transforming cells can be made up of commercially available integrated circuits. Their proper operation is demonstrated via simulations and lab experiments with memristive oscillators.

Klíčová slova

Memristors; Gyrators; Voltage; Voltage control; Transconductance; Predictive models; Licenses; Charge-controlled memristor; flux-controlled memristor; higher-order element; constitutive relation; oscillator; gyrator; OTA; CCII

Autoři

BIOLEK, D.; KOHL, Z.; VÁVRA, J.; BIOLKOVÁ, V.; BHARDWAJ, K.; SRIVASTAVA, M.

Vydáno

27. 6. 2022

Nakladatel

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Místo

PISCATAWAY

ISSN

2169-3536

Periodikum

IEEE Access

Ročník

10

Číslo

2022

Stát

Spojené státy americké

Strany od

68307

Strany do

68318

Strany počet

12

URL

https://ieeexplore.ieee.org/document/9807283

BibTex

@article{BUT178872,
  author="Dalibor {Biolek} and Zdeněk {Kohl} and Jiří {Vávra} and Viera {Biolková} and Kapil {Bhardwaj} and Mayank {Srivastava}",
  title="Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors",
  journal="IEEE Access",
  year="2022",
  volume="10",
  number="2022",
  pages="68307--68318",
  doi="10.1109/ACCESS.2022.3186281",
  issn="2169-3536",
  url="https://ieeexplore.ieee.org/document/9807283"
}