Detail publikace

Setup for an Experimental Study of Radiation Effects in 65nm CMOS

FRITZ, B. STEININGER, A. ŠIMEK, V. VEERAVALLI, V.

Originální název

Setup for an Experimental Study of Radiation Effects in 65nm CMOS

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Physical radiation experiments are a vital means for calibrating simulation models targeted to studying the impact of ionizing particles on VLSI circuits. However, their conduction requires special care and a very specific setup. In this paper we give an overview of such an experimental setup, and highlight some specific details. Beyond showing the context overarching the objectives of the experiments, the envisioned radiation sources, as well as design and architecture of a specific target ASIC, we will put specific emphasis on the communication infrastructure, namely an FPGA that controls the data exchange between some preprocessing infrastructure located on the target ASIC on one side and the host PC running the data analysis on the other. Finally, the physical arrangement comprising carrier PCB for the target ASIC, and cabling, which need to adhere specific requirements, will receive some attention as well.

Klíčová slova

Integrated circuit modeling, Field programmable gate arrays, Particle beams, Radiation effects, Transistors, Atmospheric modeling, Very large scale integration

Autoři

FRITZ, B.; STEININGER, A.; ŠIMEK, V.; VEERAVALLI, V.

Vydáno

30. 8. 2017

Nakladatel

IEEE Computer Society

Místo

Vienna

ISBN

978-1-5386-2146-2

Kniha

2017 20th Euromicro Conference on Digital System Design (DSD)

Strany od

329

Strany do

336

Strany počet

8

URL

BibTex

@inproceedings{BUT163427,
  author="FRITZ, B. and STEININGER, A. and ŠIMEK, V. and VEERAVALLI, V.",
  title="Setup for an Experimental Study of Radiation Effects in 65nm CMOS",
  booktitle="2017 20th Euromicro Conference on Digital System Design (DSD)",
  year="2017",
  pages="329--336",
  publisher="IEEE Computer Society",
  address="Vienna",
  doi="10.1109/DSD.2017.60",
  isbn="978-1-5386-2146-2",
  url="https://ieeexplore.ieee.org/document/8049805"
}