Detail publikace

How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Tomáš Hrnčíř, Jozef Vincenc Oboňa, Martin Petrenec, Jan Michalička, Christian Lang

Originální název

How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.

Klíčová slova

Focused ion beam TEM samples Beam induced damage Silicon

Autoři

Tomáš Hrnčíř, Jozef Vincenc Oboňa, Martin Petrenec, Jan Michalička, Christian Lang

Vydáno

24. 12. 2015

ISBN

978-1-62708-102-3

Kniha

ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS

Strany od

65

Strany do

70

Strany počet

6

URL

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=23&SID=D2h3EEBDI1RIlRaa1Hb&page=1&doc=1

BibTex

@inproceedings{BUT149581,
  author="Jan {Michalička}",
  title="How Xe and Ga FIB differ in inducing lateral damage on TEM samples",
  booktitle="ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS",
  year="2015",
  pages="65--70",
  isbn="978-1-62708-102-3",
  url="http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=23&SID=D2h3EEBDI1RIlRaa1Hb&page=1&doc=1"
}