Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
MIKA, F. FRANK, L.
Originální název
QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The dopant concentration in semiconductor is quantitatively determined by means of secondary electron emission. Determination is based on measurement of the secondary electron contrast in an electron optical image, observed between differently doped regions. Explanation of the contrast mechanism is proposed on the basis of experimental data collected in a low energy scanning electron microscope.
Klíčová slova
Dopant concentration, SE emission
Autoři
MIKA, F.; FRANK, L.
Vydáno
1. 1. 2004
ISBN
80-214-2636-5
Kniha
Proceedings of the 10th conference STUDENT EEICT 2004
Číslo edice
1
Strany od
646
Strany do
650
Strany počet
5
BibTex
@inproceedings{BUT13951, author="Filip {Mika} and Luděk {Frank}", title="QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION", booktitle="Proceedings of the 10th conference STUDENT EEICT 2004", year="2004", number="1", pages="5", isbn="80-214-2636-5" }