Detail publikace

QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION

MIKA, F. FRANK, L.

Originální název

QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The dopant concentration in semiconductor is quantitatively determined by means of secondary electron emission. Determination is based on measurement of the secondary electron contrast in an electron optical image, observed between differently doped regions. Explanation of the contrast mechanism is proposed on the basis of experimental data collected in a low energy scanning electron microscope.

Klíčová slova

Dopant concentration, SE emission

Autoři

MIKA, F.; FRANK, L.

Vydáno

1. 1. 2004

ISBN

80-214-2636-5

Kniha

Proceedings of the 10th conference STUDENT EEICT 2004

Číslo edice

1

Strany od

646

Strany do

650

Strany počet

5

BibTex

@inproceedings{BUT13951,
  author="Filip {Mika} and Luděk {Frank}",
  title="QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION",
  booktitle="Proceedings of the 10th conference STUDENT EEICT 2004",
  year="2004",
  number="1",
  pages="5",
  isbn="80-214-2636-5"
}