Detail publikace

Compact MOS-RC Voltage-Mode Fractional-Order Oscillator Design

Originální název

Compact MOS-RC Voltage-Mode Fractional-Order Oscillator Design

Anglický název

Compact MOS-RC Voltage-Mode Fractional-Order Oscillator Design

Jazyk

en

Originální abstrakt

A new voltage-mode fractional-order oscillator, employing in total 12 Metal-Oxide-Semiconductor (MOS) transistors, is introduced in this paper. The proposed circuit is composed of two operational transconductance amplifiers, two inverting voltage buffers, one resistor, and two fractional-order capacitors. Compared with the corresponding already introduced fractional-order oscillators, it offers the benefit of low transistor count and, therefore, simplicity of its structure. In addition, it offers the well-known advantages of fractional-order oscillators about the capability for achieving very low and high oscillation frequencies with reasonable component values. The behavior of the proposed oscillator has been numerically studied using the MATLAB program, while its performance has been evaluated by SPICE simulations, using TSMC 0.18 um Level-7 CMOS process parameters with ±1 V supply voltages.

Anglický abstrakt

A new voltage-mode fractional-order oscillator, employing in total 12 Metal-Oxide-Semiconductor (MOS) transistors, is introduced in this paper. The proposed circuit is composed of two operational transconductance amplifiers, two inverting voltage buffers, one resistor, and two fractional-order capacitors. Compared with the corresponding already introduced fractional-order oscillators, it offers the benefit of low transistor count and, therefore, simplicity of its structure. In addition, it offers the well-known advantages of fractional-order oscillators about the capability for achieving very low and high oscillation frequencies with reasonable component values. The behavior of the proposed oscillator has been numerically studied using the MATLAB program, while its performance has been evaluated by SPICE simulations, using TSMC 0.18 um Level-7 CMOS process parameters with ±1 V supply voltages.

Plný text v Digitální knihovně

BibTex


@inproceedings{BUT139039,
  author="Aslihan {Kartci} and Norbert {Herencsár} and Jaroslav {Koton} and Costas {Psychalinos}",
  title="Compact MOS-RC Voltage-Mode Fractional-Order Oscillator Design",
  annote="A new voltage-mode fractional-order oscillator, employing in total 12 Metal-Oxide-Semiconductor (MOS) transistors, is introduced in this paper. The proposed circuit is composed of two operational transconductance amplifiers, two inverting voltage buffers, one resistor, and two fractional-order capacitors. Compared with the corresponding already introduced fractional-order oscillators, it offers the benefit of low transistor count and, therefore, simplicity of its structure. In addition, it offers the well-known advantages of fractional-order oscillators about the capability for achieving very low and high oscillation frequencies with reasonable component values. The behavior of the proposed oscillator has been numerically studied using the MATLAB program, while its performance has been evaluated by SPICE simulations, using TSMC 0.18 um Level-7 CMOS process parameters with ±1 V supply voltages.",
  address="IEEE",
  booktitle="Proceedings of the 2017 23 European Conference on Circuit Theory and Design (ECCTD 2017)",
  chapter="139039",
  doi="10.1109/ECCTD.2017.8093281",
  howpublished="online",
  institution="IEEE",
  year="2017",
  month="september",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}