Detail publikace

Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

MOLAS, M. FAUGERAS, C. SLOBODENIUK, A. NOGAJEWSKI, K. BARTOŠ, M. BASKO, D. POTEMSKI, M.

Originální název

Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We present low-temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For WSe2 and WS2 monolayers, the dark exciton emission is observed at ∼50 meV below the bright exciton peak and displays a characteristic doublet structure whose intensity grows with B2 , while no magnetic field induced emission peaks appear for MoSe2 monolayer. Our experiments also show that the MoS2 monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of ∼100 meV.

Klíčová slova

transition metal dichalcogenides monolayers; tungsten diselenide; tungsten disulfide; molybdenum diselenide; molybdenum disulfide; dark excitons; Voigt configuration

Autoři

MOLAS, M.; FAUGERAS, C.; SLOBODENIUK, A.; NOGAJEWSKI, K.; BARTOŠ, M.; BASKO, D.; POTEMSKI, M.

Vydáno

1. 6. 2017

ISSN

2053-1583

Periodikum

2D Materials

Ročník

4

Číslo

2

Stát

Spojené království Velké Británie a Severního Irska

Strany od

021003-1

Strany do

021003-6

Strany počet

6