Detail publikace

Novel Grounded Capacitor-Based Resistorless Tunable Floating/Grounded Inductance Simulator

KARTCI, A. HERENCSÁR, N. VRBA, K. MINAEI, S.

Originální název

Novel Grounded Capacitor-Based Resistorless Tunable Floating/Grounded Inductance Simulator

Anglický název

Novel Grounded Capacitor-Based Resistorless Tunable Floating/Grounded Inductance Simulator

Jazyk

en

Originální abstrakt

This paper deals with resistorless lossless floating/ grounded inductance simulator and its application to third-order voltage-mode elliptic low-pass and band-pass filters providing high linearity and wide bandwidth in high frequencies. The inductance simulator circuit consists of only one grounded capacitor, single dual-output current follower (CF±), and one high-performance and versatile active element so-called voltage differencing inverting buffered amplifier (VDIBA), employing ten and six transistors, respectively. The resulting equivalent inductance value of the proposed simulator can be electronically adjusted via change of input intrinsic resistance of CF± and/or by means of bias current of the internal transconductance of the VDIBA. Theoretical results are verified by SPICE simulations using TSMC 0.18 μm level-7 LO EPI SCN018 CMOS process parameters with ±0.9 V supply voltages.

Anglický abstrakt

This paper deals with resistorless lossless floating/ grounded inductance simulator and its application to third-order voltage-mode elliptic low-pass and band-pass filters providing high linearity and wide bandwidth in high frequencies. The inductance simulator circuit consists of only one grounded capacitor, single dual-output current follower (CF±), and one high-performance and versatile active element so-called voltage differencing inverting buffered amplifier (VDIBA), employing ten and six transistors, respectively. The resulting equivalent inductance value of the proposed simulator can be electronically adjusted via change of input intrinsic resistance of CF± and/or by means of bias current of the internal transconductance of the VDIBA. Theoretical results are verified by SPICE simulations using TSMC 0.18 μm level-7 LO EPI SCN018 CMOS process parameters with ±0.9 V supply voltages.

Dokumenty

BibTex


@inproceedings{BUT129128,
  author="Aslihan {Kartci} and Norbert {Herencsár} and Kamil {Vrba} and Shahram {Minaei}",
  title="Novel Grounded Capacitor-Based Resistorless Tunable Floating/Grounded Inductance Simulator",
  annote="This paper deals with resistorless lossless floating/ grounded inductance simulator and its application to third-order voltage-mode elliptic low-pass and band-pass filters providing high linearity and wide bandwidth in high frequencies. The inductance simulator circuit consists of only one grounded capacitor, single dual-output current follower (CF±), and one high-performance and versatile active element so-called voltage differencing inverting buffered amplifier (VDIBA), employing ten and six transistors, respectively. The resulting equivalent inductance value of the proposed simulator can be electronically adjusted via change of input intrinsic resistance of CF± and/or by means of bias current of the internal transconductance of the VDIBA. Theoretical results are verified by SPICE simulations using TSMC 0.18 μm level-7 LO EPI SCN018 CMOS process parameters with ±0.9 V supply voltages.",
  booktitle="Proceedings of the 2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS)",
  chapter="129128",
  doi="10.1109/MWSCAS.2016.7870125",
  howpublished="online",
  year="2016",
  month="october",
  pages="747--750",
  type="conference paper"
}