Detail publikace

1 kW LLC Resonant Converter with HV GaN Switches

VAŠÍČEK, A.

Originální název

1 kW LLC Resonant Converter with HV GaN Switches

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Properties of the new high voltage (650 V) GaN HEMT cascodes are presented and compared with those of their silicon counterparts. The short switching times, low Qg and Coss along with low RDSon of GaN HEMTs make them ideal for high frequency DC/DC conversion. A 1kW, 400 V to 48 V LLC resonant DC/DC converter design is described and various design constraints are discussed. Presented waveforms and efficiency measurements prove the GaN HEMTs are the devices of choice for new high efficiency and power density designs.

Klíčová slova

LLC GaN ZVS efficiency magnetics cascode

Autoři

VAŠÍČEK, A.

Rok RIV

2015

Vydáno

19. 5. 2015

Nakladatel

VDE

Místo

Norimberk, DE

ISBN

978-3-8007-3924-0

Kniha

PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

Strany od

1

Strany do

7

Strany počet

7

URL

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149129&isnumber=7148817

BibTex

@inproceedings{BUT117848,
  author="Adam {Vašíček}",
  title="1 kW LLC Resonant Converter with HV GaN Switches",
  booktitle="PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of",
  year="2015",
  pages="1--7",
  publisher="VDE",
  address="Norimberk, DE",
  isbn="978-3-8007-3924-0",
  url="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149129&isnumber=7148817"
}