Detail publikace

CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR

MIKA, F. FRANK, L.

Originální název

CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping.A part of the study reported here was oriented to determining the relation between the p/n contrast and the polar angle of signal emission.

Klíčová slova

emission angle, dopant concentration, SEM,

Autoři

MIKA, F.; FRANK, L.

Vydáno

7. 12. 2004

Místo

Brno

ISBN

80-239-3246-2

Kniha

Recent Trends in charged particle optics and surface physics instrumentation

Číslo edice

1

Strany od

51

Strany do

52

Strany počet

2

BibTex

@inproceedings{BUT11305,
  author="Filip {Mika} and Luděk {Frank}",
  title="CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR",
  booktitle="Recent Trends in charged particle optics and surface physics instrumentation",
  year="2004",
  number="1",
  pages="2",
  address="Brno",
  isbn="80-239-3246-2"
}