Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
MIKA, F. FRANK, L.
Originální název
CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping.A part of the study reported here was oriented to determining the relation between the p/n contrast and the polar angle of signal emission.
Klíčová slova
emission angle, dopant concentration, SEM,
Autoři
MIKA, F.; FRANK, L.
Vydáno
7. 12. 2004
Místo
Brno
ISBN
80-239-3246-2
Kniha
Recent Trends in charged particle optics and surface physics instrumentation
Číslo edice
1
Strany od
51
Strany do
52
Strany počet
2
BibTex
@inproceedings{BUT11305, author="Filip {Mika} and Luděk {Frank}", title="CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR", booktitle="Recent Trends in charged particle optics and surface physics instrumentation", year="2004", number="1", pages="2", address="Brno", isbn="80-239-3246-2" }