Detail publikace

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

STOJAN, R. VANĚK, J. MALÝ, M.

Originální název

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Diagnostic of silicon solar cells defects is permanently one of most important steps in production of solar cells. Specify of diagnostic methods leads to a better understanding and more detailed analysis of manufactured cells. Luminescence methods of solar cells are fast and some of the most common methods today. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Spectral response of using CCD camera with those methods is in band-gap infrared wave length area. The main idea of this paper is to analyze emitted infrared radiation silicon solar cell under the forward bias by polarization spectroscopy. This analysis opens up for potential next new questions in diagnostics defects silicon solar cells by luminescence methods.

Klíčová slova

Silicon defect, luminescence, defect detection.

Autoři

STOJAN, R.; VANĚK, J.; MALÝ, M.

Rok RIV

2014

Vydáno

1. 1. 2014

Nakladatel

Horizon Research Publishing,USA

Místo

USA

ISSN

2332-3299

Periodikum

Universal Journal of Electrical and Electronic Engineering

Ročník

2

Číslo

1

Stát

Spojené státy americké

Strany od

18

Strany do

22

Strany počet

5

URL

http://www.hrpub.org/journals/jour_info.php?id=49

BibTex

@article{BUT103820,
  author="Radek {Stojan} and Jiří {Vaněk} and Martin {Malý}",
  title="Progression of Silicon Solar Cells Luminescence Diagnostic Methods",
  journal="Universal Journal of Electrical and Electronic Engineering",
  year="2014",
  volume="2",
  number="1",
  pages="18--22",
  doi="10.13189/ujeee.2014.020103",
  issn="2332-3299",
  url="http://www.hrpub.org/journals/jour_info.php?id=49"
}