Detail publikace

Wire-Bonds Durability in High-Temperature Applications

Originální název

Wire-Bonds Durability in High-Temperature Applications

Anglický název

Wire-Bonds Durability in High-Temperature Applications

Jazyk

en

Originální abstrakt

This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, that have high operating temperature. The paper is mainly focused on the behaviour and reliability of wire-bonds, which is used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity are studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software.

Anglický abstrakt

This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, that have high operating temperature. The paper is mainly focused on the behaviour and reliability of wire-bonds, which is used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity are studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software.

BibTex


@inproceedings{BUT99660,
  author="Martin {Klíma} and Boleslav {Psota} and Ivan {Szendiuch}",
  title="Wire-Bonds Durability in High-Temperature Applications",
  annote="This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, that have high operating temperature. The paper is mainly focused on the behaviour and reliability of wire-bonds, which is used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity are studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software.",
  address="VUT",
  booktitle="Electronic Devices and Systems - IMAPS CS International Conference 2013",
  chapter="99660",
  edition="first",
  howpublished="print",
  institution="VUT",
  year="2013",
  month="june",
  pages="38--43",
  publisher="VUT",
  type="conference paper"
}