Detail publikace

Parasitic Effects in Battery Charger Using New SiC Diodes

KUZDAS, J. VOREL, P.

Originální název

Parasitic Effects in Battery Charger Using New SiC Diodes

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.

Klíčová slova

SiC diode, Cool-MOS transistor, high-power charger, switching frequency.

Autoři

KUZDAS, J.; VOREL, P.

Rok RIV

2012

Vydáno

15. 10. 2012

ISBN

978-80-214-4602-1

Kniha

XII. International Conference on Low Voltage Electrical Machines 2012

Edice

1

Číslo edice

1

Strany od

110

Strany do

112

Strany počet

3

BibTex

@inproceedings{BUT95141,
  author="Jan {Kuzdas} and Pavel {Vorel}",
  title="Parasitic Effects in Battery Charger Using New SiC Diodes",
  booktitle="XII. International Conference on Low Voltage Electrical Machines 2012",
  year="2012",
  series="1",
  number="1",
  pages="110--112",
  isbn="978-80-214-4602-1"
}