Detail publikace

Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target

DALLAEVA, D. BILALOV, B. SAFARALIEV, G. KARDASHOVA, G. TOMÁNEK, P. ARKHIPOV, A.

Originální název

Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account.

Klíčová slova

ion-plasma sputtering, sputtering velocity, growth rate, ion energy

Autoři

DALLAEVA, D.; BILALOV, B.; SAFARALIEV, G.; KARDASHOVA, G.; TOMÁNEK, P.; ARKHIPOV, A.

Rok RIV

2012

Vydáno

28. 6. 2012

Nakladatel

Vysoke uceni technicke v Brne

Místo

LITERA, Tabor 43a, 61200 Brno

ISBN

978-80-214-4539-0

Kniha

IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.

Edice

FIRST

Strany od

49

Strany do

53

Strany počet

5

BibTex

@inproceedings{BUT93002,
  author="Dinara {Sobola} and Bilal {Bilalov} and Gadjimet {Safaraliev} and Gulnara {Kardashova} and Pavel {Tománek} and Alexandr {Arkhipov}",
  title="Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target",
  booktitle="IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.",
  year="2012",
  series="FIRST",
  pages="49--53",
  publisher="Vysoke uceni technicke v Brne",
  address="LITERA, Tabor 43a, 61200 Brno",
  isbn="978-80-214-4539-0"
}