Detail publikace

Analytical Solution of Circuits Employing Voltage- and Current- Excited Memristors

Originální název

Analytical Solution of Circuits Employing Voltage- and Current- Excited Memristors

Anglický název

Analytical Solution of Circuits Employing Voltage- and Current- Excited Memristors

Jazyk

en

Originální abstrakt

The analysis of complicated circuits containing nonlinear electrical elements is commonly performed via numerical algorithms of simulation programs. However, an analytical solution can be preferable to the numerical approach, particularly for the needs of basic research. This paper introduces a methodology of the analytical solution of voltage/current response of thememristor to its excitation from ideal current/voltage source, with the memristor being characterized by thememristance-charge ormemductance- flux relationships. The procedure is explained on examples of a TiO memristor with linear dopant drift and of a hydraulic memristor.

Anglický abstrakt

The analysis of complicated circuits containing nonlinear electrical elements is commonly performed via numerical algorithms of simulation programs. However, an analytical solution can be preferable to the numerical approach, particularly for the needs of basic research. This paper introduces a methodology of the analytical solution of voltage/current response of thememristor to its excitation from ideal current/voltage source, with the memristor being characterized by thememristance-charge ormemductance- flux relationships. The procedure is explained on examples of a TiO memristor with linear dopant drift and of a hydraulic memristor.

BibTex


@article{BUT91767,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
  title="Analytical Solution of Circuits Employing Voltage- and Current- Excited Memristors",
  annote="The analysis of complicated circuits containing nonlinear electrical elements is commonly performed via numerical algorithms of simulation programs. However, an analytical solution can be preferable to the numerical approach, particularly for the needs of basic research. This paper introduces a methodology of the analytical solution of voltage/current response of thememristor to its excitation from ideal current/voltage source, with the memristor being characterized by thememristance-charge ormemductance- flux relationships. The procedure is explained on examples of a TiO memristor with linear dopant drift and of a hydraulic memristor.",
  address="IEEE",
  chapter="91767",
  institution="IEEE",
  number="11",
  volume="2012",
  year="2012",
  month="may",
  pages="2619--2628",
  publisher="IEEE",
  type="journal article in Web of Science"
}