Detail publikace

Magnetron sputtering of (SiC)1-x(AlN)x solid solution thin films

BILALOV, B. KARDASHOVA, G. GITIKCHIEV, M. SOBOLA, D. ABDURAZAKOV, A.

Originální název

Magnetron sputtering of (SiC)1-x(AlN)x solid solution thin films

Anglický název

Magnetronové naprašování (SiC)1-x(AlN)x tenkých vrstev

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

ruština

Originální abstrakt

The theoretical estimations of thermalization zone length of the sprayed atoms and distance from a target to the conditional anode for the magnetron sputtering process are presented in this work. The calculations show that the thermalization of sprayed atoms of SiC - AlN target occurs on distance about 4 cm from a target at the pressure of Ar working gas 6 -12 Pa

Anglický abstrakt

The theoretical estimations of thermalization zone length of the sprayed atoms and distance from a target to the conditional anode for the magnetron sputtering process are presented in this work. The calculations show that the thermalization of sprayed atoms of SiC - AlN target occurs on distance about 4 cm from a target at the pressure of Ar working gas 6 -12 Pa

Klíčová slova

sputtering rate, target composition, substrate temperature, growth rate, thermalization zone

Klíčová slova v angličtině

sputtering rate, target composition, substrate temperature, growth rate, thermalization zone

Autoři

BILALOV, B.; KARDASHOVA, G.; GITIKCHIEV, M.; SOBOLA, D.; ABDURAZAKOV, A.

Vydáno

23. 3. 2011

Nakladatel

State Dagestan University

Místo

Machachkala

Strany od

138

Strany do

139

Strany počet

2

BibTex

@inproceedings{BUT76540,
  author="Bilal {Bilalov} and Gulnara {Kardashova} and Magomed {Gitikchiev} and Dinara {Sobola} and Abdula {Abdurazakov}",
  title="Magnetron sputtering of (SiC)1-x(AlN)x solid solution thin films",
  booktitle="International conference INNOVATIKA 2011",
  year="2011",
  number="23.03.2011",
  pages="138--139",
  publisher="State Dagestan University",
  address="Machachkala"
}