Detail publikace

Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering

BILALOV, B. GITIKCHIEV, M. SOBOLA, D. EUBOV, S.

Originální název

Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering

Anglický název

Fyzikálně-technické základy Al2O3/AlN struktur vyrobených magnetronovým naprašováním

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

ruština

Originální abstrakt

This study describes the method of AlN films formation. This method allows to use standart vacuum devices and chip precursors. It is possible to obtain thin layers by variation of technological parameters.

Anglický abstrakt

This study describes the method of AlN films formation. This method allows to use standart vacuum devices and chip precursors. It is possible to obtain thin layers by variation of technological parameters.

Klíčová slova

aluminum nitride, sputtering, ion-plassma process, sapphire substrate

Klíčová slova v angličtině

aluminum nitride, sputtering, ion-plassma process, sapphire substrate

Autoři

BILALOV, B.; GITIKCHIEV, M.; SOBOLA, D.; EUBOV, S.

Vydáno

27. 11. 2010

Nakladatel

Enegroatomizdat

Místo

Moscow

ISBN

978-5-283-00867-7

Kniha

INTERMATIC 2010. Proceedings of the International Scientific and Technical Conference "Fundamental Problems of Radioengineering and Device Construction"

Strany od

90

Strany do

93

Strany počet

4

BibTex

@inproceedings{BUT75926,
  author="Bilal {Bilalov} and Magomed {Gitikchiev} and Dinara {Sobola} and Samur {Eubov}",
  title="Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering",
  booktitle="INTERMATIC 2010. Proceedings of the International Scientific and Technical Conference {"}Fundamental Problems of Radioengineering and Device Construction{"}",
  year="2010",
  pages="90--93",
  publisher="Enegroatomizdat",
  address="Moscow",
  isbn="978-5-283-00867-7"
}