Detail publikace

Features of AlN thin films formation by ion-plasma methods

BILALOV, B. GITIKCHIEV, M. SOBOLA, D. TAIROV, I.

Originální název

Features of AlN thin films formation by ion-plasma methods

Anglický název

Vlastnosti tvorby tenkých vrstev AlN pomocí metody iontové plasmy

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

ruština

Originální abstrakt

This study investigates the physic-technological bases of low-temperature formation of aluminum nitride (AlN) layers on sapphire substrates (Al2O3) by using of ion processes it the single cycle of integrated ion-etching in order to obtain matching intermediate layer by surface nitration of sapphire substrates.

Anglický abstrakt

This study investigates the physic-technological bases of low-temperature formation of aluminum nitride (AlN) layers on sapphire substrates (Al2O3) by using of ion processes it the single cycle of integrated ion-etching in order to obtain matching intermediate layer by surface nitration of sapphire substrates.

Klíčová slova

magnetron sputtering, substrate, target, ion etching

Klíčová slova v angličtině

magnetron sputtering, substrate, target, ion etching

Autoři

BILALOV, B.; GITIKCHIEV, M.; SOBOLA, D.; TAIROV, I.

Vydáno

22. 10. 2010

Nakladatel

Univerzita Stavropol

Místo

Ruska Federace, Stavropol

ISBN

5-9296-0157-7

Kniha

Chemistry of solid state: nanomaterials, nanotechnology. X Anniversary International scientific conference

Strany od

243

Strany do

245

Strany počet

3

BibTex

@inproceedings{BUT75849,
  author="Bilal {Bilalov} and Magomed {Gitikchiev} and Dinara {Sobola} and Islam {Tairov}",
  title="Features of AlN thin films formation by ion-plasma methods",
  booktitle="Chemistry of solid state: nanomaterials, nanotechnology. X Anniversary International scientific conference",
  year="2010",
  pages="243--245",
  publisher="Univerzita Stavropol",
  address="Ruska Federace, Stavropol",
  isbn="5-9296-0157-7"
}