Detail publikace

Near-field optical imaging of carrier dynamics in silicon with superresolution

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L., KAWATA, S.

Originální název

Near-field optical imaging of carrier dynamics in silicon with superresolution

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characteristic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.

Klíčová slova

near-field optics, optical imaging, superresolution, semiconductor, silicon, lifetime, carrier dynamics

Autoři

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L., KAWATA, S.

Rok RIV

2003

Vydáno

2. 3. 2003

Nakladatel

Institute for Physics of microstructures RAS

Místo

Nizhniy Novgorod, Russia

Strany od

63

Strany do

65

Strany počet

3

BibTex

@inproceedings{BUT7380,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}",
  title="Near-field optical imaging of carrier dynamics in silicon with superresolution",
  booktitle="Scanning Probe Microscopy - 2003",
  year="2003",
  pages="63--65",
  publisher="Institute for Physics of microstructures RAS",
  address="Nizhniy Novgorod, Russia"
}