Detail publikace

The Tantalum Capacitor as a MIS Structure in Reverse Mode

Originální název

The Tantalum Capacitor as a MIS Structure in Reverse Mode

Anglický název

The Tantalum Capacitor as a MIS Structure in Reverse Mode

Jazyk

en

Originální abstrakt

The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.

Anglický abstrakt

The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.

BibTex


@inproceedings{BUT6872,
  author="Josef {Šikula} and Jan {Pavelka} and Jan {Hlávka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="The Tantalum Capacitor as a MIS Structure in Reverse Mode",
  annote="The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.",
  address="Components Technology Institute, Inc.",
  booktitle="Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001",
  chapter="6872",
  institution="Components Technology Institute, Inc.",
  year="2001",
  month="january",
  pages="289",
  publisher="Components Technology Institute, Inc.",
  type="conference paper"
}