Detail publikace

Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis

TICHOPÁDEK, P. ŠIKOLA, T. NEBOJSA, A. ČECHAL, J.

Originální název

Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Klíčová slova

Spectroscopic Ellipsometry, Ultrathin Film

Autoři

TICHOPÁDEK, P.; ŠIKOLA, T.; NEBOJSA, A.; ČECHAL, J.

Rok RIV

2002

Vydáno

15. 11. 2001

Nakladatel

FEI VUT v Brně

Místo

Brno

ISBN

80-214-1992-X

Kniha

Sborník příspěvků konference Nové trendy ve fyzice

Strany od

415

Strany do

419

Strany počet

5

BibTex

@{BUT69638
}