Detail publikace

Measurement of Residual Reflectivity and Wavelength of Coated Laser Diodes

Originální název

Measurement of Residual Reflectivity and Wavelength of Coated Laser Diodes

Anglický název

Measurement of Residual Reflectivity and Wavelength of Coated Laser Diodes

Jazyk

en

Originální abstrakt

This contribution presents experimental results obtained by deposition of double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.

Anglický abstrakt

This contribution presents experimental results obtained by deposition of double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.

BibTex


@inproceedings{BUT6277,
  author="Bohdan {Růžička} and Otakar {Wilfert}",
  title="Measurement of Residual Reflectivity and Wavelength of Coated Laser Diodes",
  annote="This contribution presents experimental results obtained by deposition of double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a "modulation depth" of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.",
  address="Institute of Radio Electronics, Brno UT",
  booktitle="RADIOELEKTRONIKA 2001",
  chapter="6277",
  institution="Institute of Radio Electronics, Brno UT",
  year="2001",
  month="may",
  pages="286",
  publisher="Institute of Radio Electronics, Brno UT",
  type="conference paper"
}