Detail publikace

Near-field photoluminescence as high resolution diagnostics of semiconductor structures

OTEVŘELOVÁ, D., DOBIS, P., BRÜSTLOVÁ, J., TOMÁNEK, P.

Originální název

Near-field photoluminescence as high resolution diagnostics of semiconductor structures

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.

Klíčová slova v angličtině

Scanning near-field optical microscope, photoluminescence, quantum well structure, spectral photoluminescence intensity, subwavelength resolution

Autoři

OTEVŘELOVÁ, D., DOBIS, P., BRÜSTLOVÁ, J., TOMÁNEK, P.

Rok RIV

2001

Vydáno

27. 6. 2001

Nakladatel

VUTIUM

Místo

Brno

ISBN

80-24-14-1892-3

Kniha

Proceedings of Materials structure and micromechanics of fracture

Strany od

439

Strany do

443

Strany počet

5

BibTex

@{BUT70242
}