Detail publikace

Bulk-Driven Current Differencing Transconductance Amplifier

Originální název

Bulk-Driven Current Differencing Transconductance Amplifier

Anglický název

Bulk-Driven Current Differencing Transconductance Amplifier

Jazyk

en

Originální abstrakt

Low-voltage (LV) low-power (LP) integrated circuit design is becoming a leading trend in VLSI technology, particularly in special portable applications. In this paper, the principle of bulk-driven MOS transistor is employed in the design of a novel LV LP Current Differencing Transconductance Amplifier (CDTA). Designs in the 0.25 um CMOS technology were verified via the simulation in PSpice. The supply voltages are only +-0.6 V.

Anglický abstrakt

Low-voltage (LV) low-power (LP) integrated circuit design is becoming a leading trend in VLSI technology, particularly in special portable applications. In this paper, the principle of bulk-driven MOS transistor is employed in the design of a novel LV LP Current Differencing Transconductance Amplifier (CDTA). Designs in the 0.25 um CMOS technology were verified via the simulation in PSpice. The supply voltages are only +-0.6 V.

BibTex


@article{BUT50219,
  author="Fabian {Khateb} and Dalibor {Biolek}",
  title="Bulk-Driven Current Differencing Transconductance Amplifier",
  annote="Low-voltage (LV) low-power (LP) integrated circuit design is becoming a leading trend in VLSI technology, particularly in special portable applications. In this paper, the principle of bulk-driven MOS transistor is employed in the design of a novel LV LP Current Differencing Transconductance Amplifier (CDTA). Designs in the 0.25 um CMOS technology were verified via the simulation in PSpice. The supply voltages are only +-0.6 V.",
  address="Birhhauser",
  chapter="50219",
  institution="Birhhauser",
  number="1",
  volume="2011",
  year="2011",
  month="january",
  pages="1071--1089",
  publisher="Birhhauser",
  type="journal article - other"
}