Detail publikace

Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates

LYSÁČEK, D. VÁLEK, L. SPOUSTA, J. ŠIKOLA, T. ŠPETÍK, R.

Originální název

Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycrystalline layer.

Klíčová slova

Chemical vapor deposition; Structural properties; Polycrystalline silicon; Recrystallization; Grain growth

Autoři

LYSÁČEK, D.; VÁLEK, L.; SPOUSTA, J.; ŠIKOLA, T.; ŠPETÍK, R.

Rok RIV

2010

Vydáno

3. 5. 2010

ISSN

0040-6090

Periodikum

Thin Solid Films

Ročník

518

Číslo

14

Stát

Nizozemsko

Strany od

4052

Strany do

4057

Strany počet

6

BibTex

@article{BUT49131,
  author="David {Lysáček} and Lukáš {Válek} and Jiří {Spousta} and Tomáš {Šikola} and R. {Špetík}",
  title="Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates",
  journal="Thin Solid Films",
  year="2010",
  volume="518",
  number="14",
  pages="4052--4057",
  issn="0040-6090"
}