Detail publikace

Modeling of Microwave Semiconductor Diodes

Originální název

Modeling of Microwave Semiconductor Diodes

Anglický název

Modeling of Microwave Semiconductor Diodes

Jazyk

en

Originální abstrakt

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

Anglický abstrakt

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

Dokumenty

BibTex


@article{BUT49090,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Modeling of Microwave Semiconductor Diodes",
  annote="The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.",
  address="Ústav radioelektroniky, VUT v Brně",
  chapter="49090",
  institution="Ústav radioelektroniky, VUT v Brně",
  journal="Radioengineering",
  number="3",
  volume="17",
  year="2008",
  month="september",
  pages="47--52",
  publisher="Ústav radioelektroniky, VUT v Brně",
  type="journal article - other"
}