Detail publikace

Snap-back characteristics tuning of SCR-based semiconductor structures

Originální název

Snap-back characteristics tuning of SCR-based semiconductor structures

Anglický název

Snap-back characteristics tuning of SCR-based semiconductor structures

Jazyk

en

Originální abstrakt

Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS.

Anglický abstrakt

Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS.

BibTex


@article{BUT45226,
  author="Petr {Běťák} and Vladislav {Musil}",
  title="Snap-back characteristics tuning of SCR-based semiconductor structures",
  annote="Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS.",
  chapter="45226",
  journal="WSEAS Transactions on Electronics",
  number="9",
  volume="4",
  year="2008",
  month="april",
  pages="175--180",
  type="journal article"
}