Detail publikace

A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water

ČECHAL, J. MACH, J. VOBORNÝ, S. KOSTELNÍK, P. BÁBOR, P. SPOUSTA, J. ŠIKOLA, T.

Originální název

A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water

Anglický název

A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water

Jazyk

en

Originální abstrakt

Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.

Anglický abstrakt

Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.

Dokumenty

BibTex


@article{BUT43424,
  author="Jan {Čechal} and Jindřich {Mach} and Stanislav {Voborný} and Petr {Kostelník} and Petr {Bábor} and Jiří {Spousta} and Tomáš {Šikola}",
  title="A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water",
  annote="Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron
spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface,
the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher
temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to
0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium
atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface
structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water
fragments.",
  chapter="43424",
  journal="Surface Science",
  number="9",
  volume="601",
  year="2007",
  month="may",
  pages="2047--2053",
  type="journal article - other"
}