Detail publikace

Tunnel noise spectroscopy by reflection SNOM and STM

TOMÁNEK, P. GRMELA, L. BRÜSTLOVÁ, J. DOBIS, P.

Originální název

Tunnel noise spectroscopy by reflection SNOM and STM

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

Klíčová slova

1/f noise, STM, r-SNOM, measurements, tunnel noise spectroscopy, local index variation

Autoři

TOMÁNEK, P.; GRMELA, L.; BRÜSTLOVÁ, J.; DOBIS, P.

Rok RIV

1997

Vydáno

16. 6. 1997

Nakladatel

SPIE

Místo

Bellingham, USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Ročník

3098

Číslo

1

Stát

Spojené státy americké

Strany od

514

Strany do

514

Strany počet

1

BibTex

@article{BUT38525,
  author="Pavel {Tománek} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
  title="Tunnel noise spectroscopy by reflection SNOM and STM",
  journal="Proceedings of SPIE",
  year="1997",
  volume="3098",
  number="1",
  pages="1",
  issn="0277-786X"
}